isc website： 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Exposure to limiting values for extended periods may affect device daatsheet.
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Mounted with heatsink compound. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection datwsheet of large screen colour television receivers up to 32 kHz. Cfb -VBB t Fig. September 8 Rev 2. Switching times waveforms 16 kHz. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
UNIT – – 1. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature. Click here to Download. SOT; The seating plane is electrically isolated from all terminals.
Typical collector storage and fall time. Switching times waveforms 32 kHz. Application information Where application information is given, it is advisory and does not form part of the specification.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips dataasheet any damages resulting from such improper use or sale. No liability will be accepted by the publisher for any consequence of its use.
Typical collector-emitter saturation voltage.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics datassheet of this specification is not implied. September 7 Rev 2. Typical DC current gain. September 6 Rev 2.
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BU2520AX Silicon Diffused Power Transistor
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Typical base-emitter saturation voltage. New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Your buying lead can then be posted, and the reliable suppliers datawheet quote via our online message system or other channels soon. Oscilloscope display for VCEOsust. Product specification This data sheet contains final product specifications. How long will receive a response. September 1 Rev 2.
Test circuit for VCEOsust. Stress above one or more of the limiting values may cause permanent damage to the device. Switching times test circuit. September 2 Rev 2.