BU2508DF DATASHEET PDF

BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Stress above one or more of the limiting values may cause permanent damage to the device. Preliminary specification This fatasheet sheet contains preliminary data; supplementary data may be published later.

Bu258df data sheet contains target or goal specifications for product development. Buaf transistor equivalent substitute crossreference search. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Buaf datasheet, equivalent, cross reference search. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Npn triple diffused datasheer planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. High collectorbase voltagevcbov high speed switching. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. II Extension for repetitive pulse operation. Budf philips semiconductors, budf datasheet. Typical DC current gain. This data sheet contains final product specifications.

BU2508DF Datasheet PDF

Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Typical collector-emitter saturation voltage. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic datasueet envelope.

July 7 Rev 1. July 1 Rev 1. Typical base-emitter saturation voltage.

BUDF Datasheet PDF – Tiger Electronic

Typical collector storage and fall time. SOT; The seating plane is electrically isolated from all terminals. No liability will be accepted by the publisher for any consequence of its use. C 1 Turn-off current.

Exposure to limiting values for extended periods may affect device reliability. Forward bias safe operating area. Refer to mounting instructions for F-pack envelopes. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Isc Silicon NPN Power Transistor

Application information Where application information is given, it is advisory and does not form part of the specification. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. July 5 Rev 1. July 2 Rev 1.

Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. July 6 Rev 1. Silicon diffused power transistor buaf datasheet catalog. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. C I Region of permissible DC operation.

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