12N60 DATASHEET PDF

Power MOSFET. ▫ ORDERING INFORMATION. 12N60 12N 1 of 7. Z ibo Seno Electronic Engineering Co., Ltd. com. 12N60 datasheet, 12N60 circuit, 12N60 data sheet: UTC – 12 Amps, / Volts N-CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for. Description, 12 Amps, / Volts N-channel Mosfet. Company, Unisonic Technologies. Datasheet, Download 12N60 datasheet. Quote. Find where to buy.

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BOM, Gerber, user manual, schematic, test procedures, etc.

The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. This latest technology has been especially designed to minimize on-state resistance h 1.

12N60 Datasheet(PDF) – Nell Semiconductor Co., Ltd

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto.

It is mainly suitable for active power factor correction and switching mode power supplies. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

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To minimize on-state resistance, provide superior 1.

Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. The device has the high i 1. Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support. You will receive an email when your request is approved. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

These devices are suited for high efficiency switch mode power supply. The transistor can be used in vario 1. The device ha 1.

Log into MyON to proceed. Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns.

12N60 Datasheet

Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software datasheett Modifications with the Licensee Products.

The transistor can be used in various p 1. Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written 1n260 of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void. F Applications Pin 1: Low Gate Charge Typ. The transistor can be used in various po 1.

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This advanced technology has been especially dataheet to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. Request for this document already exists and is waiting for approval.

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Licensee shall not distribute externally or disclose to any Dagasheet or to any xatasheet party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

12N60 Datasheet

These devices have the hi 1. The transistor can be used in various 1. Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.